ls o ne.. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 buy47 BUY48 mechanical data dimensions in mm (inches) high voltage, high current silicon expitaxial planar npn transistor 2 1 3 applications intended for high voltage, high current, switching applications up to 7a. to-39 package pin 1 - emitter pin 2 - base pin 3 - collector absolute maximum ratings(tcase = 25c unless otherwise stated) quality semi-conductors buy47 BUY48 vcbo vceo vebo 'c 'cm ^tot tstg tj collector - base voltage collector - emitter voltage emitter - base voltage collector current peak collector current (repetitive) total power dissipation storage temperature range (ie = 0) (ib = 0) (ic = 0) @tamb<25c @tcase < 50c maximum operating junction temperature 150v 120v 6v 7a 10a 1w 10w -65 to +200 200c 200v 170v c
BUY48 electrical characteristics (tcase = 25c unless otherwise stated) parameter ipro collector cut-off current odij v(br)cbo* collector - base breakdown voltage vceo(sus)* collector - emitter sustaining voltage vebo* emitter - base voltage vce(sat)' collector - emitter saturation voltage vbe(sat)* base - emitter saturation voltage hff. dc current gain r c. ft transition frequency ccbo collector - base capacitance ton turn-on time toff fall time test conditions vcb = 80v buy47 ie = 0 tc=125c c; i_. vcb = 100v BUY48 ie = 0 tc=125c lc=1ma buy47 \j ie = 0 BUY48 lr = 20ma buy47 o ib = 0 BUY48 !e=1ma lc = 0 lc = 0.5a ib = 50ma lc = 2a ib = 0.2a lc = 5a ib = 0.5a lc = 0.5a ib = 50ma lc = 2a ib = 0.2a ic = 5a ib = 0.5a lc = 50ma vce = 5v lc = 0.5a vce = 5v \_? v-/c. lc - 2a vce - 5v lc = 5a vce - 5v lc= 100ma vce = 10v ie = 0 vcb = 50v c \-/d f= 1mhz lc = 5a vcc = 40v ib1 =-lb2^0.5a min. typ. max. 10 1 10 1 150 200 120 170 6 0.05 0.45 1 0.8 1.1 1.5 130 40 150 40 130 15 45 90 45 80 1 2 unit ^a ma ma ma v v v v v mhz pf us notes * pulse test: tp = 300|as, 8 = 1.5%
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